surmount tm low barrier silicon schottky cross - over quad series features n extremely low parasitic capitance and inductance n surface mountable in microwave circuits, no wirebonds required n rugged hmic construction with polyimide scratch protection n reliable, multilayer metalization with a diffusion barrier, 100% stabilization bake (300 c, 16 hours) n lower susceptibility to esd damage description the ma4e2544l - 1282 series su rmount tm low barrier, silicon schottky cross - over quad diodes are fabricated with the patented heterolithic microwave integrated circuit (hmic) process. hmic circuits consist of silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, low loss, microstrip transmission medium. the combination of silicon and glass all ows hmic devices to have excellent loss and power dissipation characteristics in a low profile, reliable device. the surmount s chottky devices are excellent choices for circuits requiring the small parasitics of a beam lead device coupled with the superi or mechanical performance of a chip. the surmount structure employs very low resistance silicon vias to connect the schottky con tacts to the metalized mounting pads on the bottom surface of the chip. these devices are reliable, repeatable, and a lower cost performance solution to conventional devices. they have lower susceptibility to electrostatic discharge than conventional beam lead schottky diodes. the multi - layer metalization employed in the fabrication of the surmount schottky junctions includes a p latinum diffusion barrier, which permits all devices to be subjected to a 16 - hour non - operating stabilization bake at 300 c. the ? 0505 ? outline allows for surface mount placement and multi - functional polarity orientations. applications the ma4e2544l - 1282 series surmount tm low barrier silicon schottky cross - over quad diodes are recommended for use in microwave circuits throug h ku band frequencies for lower power applications such as mixers, sub - harmonic mixers, detectors and limiters. the hmic constru ction facilitates the direct replacement of more fragile beam lead diodes with the corresponding surmount diode, which can be co nnected to a hard or soft substrate circuit with solder. v 1.00 case style 1282 - topview 1 dim inches millimeters min. max. min. max. a 0.0445 0.0465 1.130 1.180 b 0.0445 0.0465 1.130 1.180 c 0.0040 0.0080 0.102 0.203 d sq. 0.0128 0.325 e 0.0128 0.0148 0.325 0.375 0.0148 0.375 equivalent circuit ma4e2544l - 1282 a b c d e d
surmount tm low barrier silicon schottky diodes: cross - over quad series ma4e2544l - 1282 v 1.00 m/a - com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without not ice. visit www.macom.com for additional data sheets and product information. n north america: tel. (800) 366 - 2266 n asia/pacific: tel.+ 81 - 44 - 844 - 8296 , fax + 81 - 44 - 844 - 8298 n europe: tel. +44 (1908) 574 200, fax+44 (1908) 574 300 2 electrical specifications @ 25 c (measured as single diodes) handling all semiconductor chips should be handled with care to avoid damage or contamination from perspiration and skin oils. the use of plastic tipped tweezers or vacuum pickups is strongly recommended for individual components. the top surface of the d ie has a protective polyimide coating to minimize damage. the rugged construction of these surmount devices allows the use of s tandard handling and die attach techniques. it is important to note that industry standard electrostatic discharge (esd) control is required at all times, due to the sensitive nature of schottky junctions. bulk handling should insure that abrasion and me chanical shock are minimized. parameter value operating temperature - 40 c to +1 50 c storage temperature - 40 c to +1 50 c junction temperature +1 75 c reverse voltage (10 m a) 5 v rf c.w. incident power + 20 dbm rf & dc dissipated power 50 mw forward current 20 ma absolute maximum ratings 1 @ +25 c 1. exceeding any of these values may result in permanent damage model number type recommended frequency range vf @ 1 ma ( mv ) ct @ 0 v ( pf ) rt slope resistance ( vf1 - vf2 )/(10.5 ma - 9.5 ma ) ( w ) ma4e2544l - 1282 low barrier dc - 18 ghz 330 max 300 typ 0.22 max 0.15 typ 16 typ 20 max rt is the dynamic slope resistance where rt = rs + rj, where rj = 26 / idc (idc is in ma) and rs is the ohmic resistance die bonding die attach for these devices is made simple through the use of surface mount die attach technology. mounting pads ar e conveniently located on the bottom surface of these devices, and are opposite the active junction. the devices are well suited for higher temperature solder attachment onto hard substrates. 80au/20sn and sn63/pb37 solders are acceptable for usage. die a ttach for hard substrates, we recommend utilizing a vacuum tip and force of 60 to 100 grams applied uniformly to the top surface of the device, using a hot gas bonder with equal heat applied across the bottom mounting pads of the device. when soldering to soft substrates, it is recommended to use a lead - tin interface at the circuit board mounting pads. position the die so that its mounting pads are aligned with the circuit board mounting pads. reflow the solder paste by applying equal heat to the circuit at both die - mounting pads. the solder joint must not be made one at a time, creating un - equal heat flow and thermal stress. solder reflow should not be performed by causing heat to flow through the top surface of the die. since the hmic glass is transparent, the edges of the mounting pads can be visually inspected through the die after die attach is complet ed. max forward voltage difference d vf @ 1 ma: 10 mv
surmount tm low barrier silicon schottky diodes: cross - over quad series ma4e2544l - 1282 v 1.00 m/a - com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without not ice. visit www.macom.com for additional data sheets and product information. n north america: tel. (800) 366 - 2266 n asia/pacific: tel.+ 81 - 44 - 844 - 8296 , fax + 81 - 44 - 844 - 8298 n europe: tel. +44 (1908) 574 200, fax+44 (1908) 574 300 3 circuit mounting dimensions (inches) * spice parameters (per diode) are based on the ma4e2502 series datasheet. ordering information part number package ma4e2544l - 1282w wafer on frame ma4e2544l - 1282 die in carrier ma4e2544l - 1282t tape/reel ma4e2544l - 1282 low barrier spice parameters (per diode)* is (na) rs ( w ) n cj0 ( pf ) m ik (ma) cjpar (pf) vj (v) fc bv (v) ibv (ma) 26 12.8 1.20 1.0 e - 2 0.5 14 9.0 e - 2 8.0 e - 2 0.5 5.0 1.0 e - 2 0.020 0.020 0.013 0.020 0.020 0.020 0.020 0.013
surmount tm low barrier silicon schottky diodes: cross - over quad series ma4e2544l - 1282 v 1.00 m/a - com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without not ice. visit www.macom.com for additional data sheets and product information. n north america: tel. (800) 366 - 2266 n asia/pacific: tel.+ 81 - 44 - 844 - 8296 , fax + 81 - 44 - 844 - 8298 n europe: tel. +44 (1908) 574 200, fax+44 (1908) 574 300 4 average schematic values per diode model number ls (nh) rs ( w ) rj ( w ) ct ( pf ) ma4e2544l - 1282 0.2 12.8 26 / idc 0.15 ma4e2544l - 1282 schematic per diode ls rs rj ct
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